BSS84
FAIRCHILD SEMICONDUCTOR BSS84 晶体管, MOSFET, P沟道, -130 mA, -50 V, 1.2 ohm, -5 V, -1.7 V
最大源漏极电压VdsDrain-Source Voltage| -60V \---|--- 最大栅源极电压Vgs±Gate-Source Voltage| 20V 最大漏极电流IdDrain Current| -0.13A 源漏极导通电阻RdsDrain-Source On-State Resistance| 1.2Ω @-100mA,-5V 开启电压Vgs(th)Gate-Source Threshold Voltage| -0.8--2.V 耗散功率PdPower Dissipation| 360mW/0.36W Description & Applications| Features • −0.13A, −50V. RDSON = 10Ω @ VGS = −5 V • Voltage controlled p-channel small signal switch • High density cell design for low RDSON • High saturation current 描述与应用| •0.13A,-50V。 RDS(ON)=10Ω@ VGS=-5 V •电压控制p沟道小信号开关 •高密度电池设计的低RDS(ON) •高饱和电流