SI2304DDS-T1-GE3

VISHAY  SI2304DDS-T1-GE3  晶体管, MOSFET, N沟道, 3.6 A, 30 V, 0.049 ohm, 10 V, 2.2 V

The is a 30VDS TrenchFET® N-channel enhancement-mode Power MOSFET suitable for DC-to-DC converter applications.

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100% Rg tested

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-55 to 150°C Operating temperature range

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Halogen-free

欧时:
### N 通道 MOSFET，30V 至 50V，Vishay Semiconductor### MOSFET 晶体管，Vishay Semiconductor

艾睿:
Trans MOSFET N-CH 30V 3.3A 3-Pin SOT-23 T/R

富昌:
单 N 沟道 30 V 0.06 Ohm 表面贴装 功率 MosFet - SOT-23-3

Verical:
Trans MOSFET N-CH 30V 3.3A 3-Pin SOT-23 T/R

Newark:
# VISHAY  SI2304DDS-T1-GE3  MOSFET Transistor, N Channel, 3.6 A, 30 V, 0.049 ohm, 10 V, 2.2 V

力源芯城:
30V,3.6A,0.06Ω,N沟道功率MOSFET