SI2304DDS-T1-GE3
数据手册.pdfVISHAY SI2304DDS-T1-GE3 晶体管, MOSFET, N沟道, 3.6 A, 30 V, 0.049 ohm, 10 V, 2.2 V
The is a 30VDS TrenchFET® N-channel enhancement-mode Power MOSFET suitable for DC-to-DC converter applications.
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- 100% Rg tested
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- -55 to 150°C Operating temperature range
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- Halogen-free
欧时:
### N 通道 MOSFET，30V 至 50V，Vishay Semiconductor### MOSFET 晶体管，Vishay Semiconductor
艾睿:
Trans MOSFET N-CH 30V 3.3A 3-Pin SOT-23 T/R
富昌:
单 N 沟道 30 V 0.06 Ohm 表面贴装 功率 MosFet - SOT-23-3
Verical:
Trans MOSFET N-CH 30V 3.3A 3-Pin SOT-23 T/R
Newark:
# VISHAY SI2304DDS-T1-GE3 MOSFET Transistor, N Channel, 3.6 A, 30 V, 0.049 ohm, 10 V, 2.2 V
力源芯城:
30V,3.6A,0.06Ω,N沟道功率MOSFET