SI2302DDS-T1-GE3
VISHAY SI2302DDS-T1-GE3 晶体管, MOSFET, N沟道, 2.6 A, 20 V, 0.045 ohm, 4.5 V
The is a 20VDS TrenchFET® N-channel enhancement-mode Power MOSFET suitable for load switch and DC-to-DC converter applications.
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- 100% Rg tested
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- Halogen-free
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- -55 to 150°C Operating temperature range
艾睿:
Trans MOSFET N-CH 20V 2.6A 3-Pin SOT-23 T/R
富昌:
SI2302DDS 系列 N沟道 20 V 2.6 A 0.067 Ω 3.5 nC 表面贴装 Mosfet - SOT-23
Chip1Stop:
Trans MOSFET N-CH 20V 2.6A 3-Pin SOT-23 T/R
Verical:
Trans MOSFET N-CH 20V 2.6A 3-Pin SOT-23 T/R
Newark:
# VISHAY SI2302DDS-T1-GE3 MOSFET Transistor, N Channel, 2.6 A, 20 V, 0.045 ohm, 4.5 V
儒卓力:
**N-CHANNEL-FET 2,6A 20V SOT23 **
力源芯城:
20V,2.6A,0.075Ω,N沟道功率MOSFET
