2SJ200
P CHANNEL MOS TYPE HIGH POWER AMPLIFIER APPLICATION
High Power Amplifier Application
High breakdown voltage : VDSS= −180 V
High forward transfer admittance : |Yfs| = 4.0 S typ.
Complementary to 2SK1529
2SJ200 PDF数据文档
| 图片 | 型号 | 厂商 | 下载 |
|---|---|---|---|
 | 2SJ200 | Toshiba 东芝 | |
 | 2SJ281-TL-E | ON Semiconductor 安森美 | |
 | 2SJ278MYTR-E | Renesas Electronics 瑞萨电子 | |
 | 2SJ202-T1-A | Renesas Electronics 瑞萨电子 | |
 | 2SJ248-E | Renesas Electronics 瑞萨电子 | |
 | 2SJ221-E | Renesas Electronics 瑞萨电子 | |
| 2SJ222-E | Renesas Electronics 瑞萨电子 | |
| 2SJ244JYTR-E | Renesas Electronics 瑞萨电子 | |
| 2SJ215-E | Renesas Electronics 瑞萨电子 | |
 | 2SJ201 | Toshiba 东芝 |