硅P沟道MOS场效应晶体管 Silicon P Channel MOS FET
Description
High speed power switching
Features
• Low on-resistance
• High speed switching
• Low drive current
• 4 V gate drive device can be driven from 5 V source
• Suitable for switching regulator, DC-DC converter
Chip1Stop:
Trans MOSFET P-CH 100V 8A 3-Pin3+Tab TO-220FM Box
| 图片 | 型号 | 厂商 | 下载 |
|---|---|---|---|
 | 2SJ248-E | Renesas Electronics 瑞萨电子 | |
 | 2SJ281-TL-E | ON Semiconductor 安森美 | |
 | 2SJ278MYTR-E | Renesas Electronics 瑞萨电子 | |
 | 2SJ202-T1-A | Renesas Electronics 瑞萨电子 | |
 | 2SJ221-E | Renesas Electronics 瑞萨电子 | |
| 2SJ222-E | Renesas Electronics 瑞萨电子 | |
| 2SJ244JYTR-E | Renesas Electronics 瑞萨电子 | |
| 2SJ215-E | Renesas Electronics 瑞萨电子 | |
 | 2SJ201 | Toshiba 东芝 | |
 | 2SJ200 | Toshiba 东芝 |
