2SJ222-E
硅P沟道MOS场效应晶体管 Silicon P Channel MOS FET
Description
High speed power switching
Features
• Low on-resistance
• High speed switching
• Low drive current
• 4 V gate drive device
-Can be driven from 5 V source
• Suitable for motor drive, DC-DC converter, power switch and solenoid drive
Chip1Stop:
Trans MOSFET P-CH 100V 20A 3-Pin3+Tab TO-220FM Box