PBSS306NZ,135

NXP  PBSS306NZ,135  单晶体管 双极, NPN, 100 V, 110 MHz, 700 mW, 5.1 A, 30 hFE

The is a 5.1A NPN breakthrough-in small signal BISS Transistor in a small surface-mount plastic package with increased heat-sink.

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Low collector-emitter saturation voltage VCEsat

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High collector current capability IC and ICM

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High collector current gain hFE at high IC

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High efficiency due to less heat generation

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Smaller required printed-circuit board PCB area than for conventional transistors

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PNP complement is PBSS306PZ

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S306NZ Marking code