PBSS4041SPN

NXP  PBSS4041SPN  双极晶体管阵列, NPN, PNP, 60 V, 2.3 W, 6.7 A, 300 hFE, SOIC

The is a 60V NPN/PNP low VCEsat Breakthrough In Small Signal BISS Transistor with very low collector-emitter saturation voltage and high efficiency due to less heat generation. Suitable for load switch, battery driven devices and charging circuits.

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150°C Junction temperature

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Smaller required printed-circuit board PCB area than for conventional transistors

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High collector current capability

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High collector current gain