PBSS5350T

NXP  PBSS5350T  单晶体管 双极, PNP, 50 V, 300 mW, 3 A, 200 hFE

集电极-基极反向击穿电压VBRCBOCollector-Base VoltageVCBO| -50V \---|--- 集电极-发射极反向击穿电压VBRCEOCollector-Emitter VoltageVCEO| −50V 集电极连续输出电流ICCollector CurrentIC| -2A 截止频率fTTranstion FrequencyfT| 100MHz 直流电流增益hFEDC Current GainhFE| 200 管压降VCE（sat）Collector-Emitter SaturationVoltage| -390mV/-0.39V 耗散功率PcPoWer Dissipation| 300mW/0.3W Description & Applications| 30 V low VCEsat PNP transistor FEATURES • Low collector-emitter saturation voltage VCEsat and corresponding low RCEsat • High collector current capability • High collector current gain • Improved efficiency due to reduced heat generation. • NPN complement: PBSS4350T. APPLICATIONS • Power management applications • Low and medium power DC/DC convertors • Supply line switching • Battery chargers • Linear voltage regulation with low voltage drop-out 描述与应用| 30伏的低VCE（sat）的PNP 特点 •低集电极 - 发射极饱和电压VCE（饱和）和相应的低RCEsat •高集电极电流能力 •高集电极电流增益 •由于产生的热量减少，提高了效率。 •NPN补充：PBSS4350T。 应用 •电源管理应用 •低功率和中功率DC/ DC转换器 •供电线路开关 •电池充电器 •线性电压调节，低电压降