PBSS5440D,115

NXP  PBSS5440D,115  单晶体管 双极, PNP, -40 V, 110 MHz, 1.1 W, -4 A, 200 hFE

The is a PNP breakthrough-in small signal BISS Transistor housed in a surface-mount plastic package.

.

Ultra-low collector-emitter saturation voltage VCEsat

.

Very low collector-emitter saturation resistance

.

High efficiency due to less heat generation

.

Up to 15A peak current

.

NPN complement is PBSS4440D

.

71 Marking code