PBSS306PX,115
NXP PBSS306PX,115 单晶体管 双极, PNP, -100 V, 100 MHz, 600 mW, -3.7 A, 300 hFE
The is a 3.7A PNP breakthrough-in small signal BISS Transistor in a small and flat lead surface-mount plastic package. It offers collector pad for good heat transfer.
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- Low collector-emitter saturation voltage VCEsat
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- High collector current capability IC and ICM
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- High collector current gain hFE at high IC
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- High efficiency due to less heat generation
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- Smaller required printed-circuit board PCB area than for conventional transistors
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- NPN complement is PBSS306NX
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- 5N Marking code