2SJ511

2SJ511 P沟道MOS场效应管 -30V -2A 0.32ohm SOT-89 marking/标记 ZF 高速开关

最大源漏极电压VdsDrain-Source Voltage| -30V \---|--- 最大栅源极电压Vgs±Gate-Source Voltage| 20V 最大漏极电流IdDrain Current| -2A 源漏极导通电阻RdsDrain-Source On-State Resistance| 0.32Ω @-1A,-10V 开启电压Vgs（th）Gate-Source Threshold Voltage| -0.8--2.0V 耗散功率PdPower Dissipation| 500mW/0.5W Description & Applications| TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE 4V gate drive low drain-source on resistance high forward transfer admittance low leakage current enhancement mode 描述与应用| 场效应的硅P沟道MOS型 4V栅极驱动 低漏源电阻 高正向转移导纳 低漏电流 增强模式