BSZ120P03NS3GATMA1

INFINEON  BSZ120P03NS3GATMA1  晶体管, MOSFET, P沟道, -40 A, -30 V, 0.009 ohm, -10 V, -2.5 V 新

表面贴装型 P 通道 11A（Ta），40A（Tc） 2.1W（Ta），52W（Tc） PG-TSDSON-8

得捷:
MOSFET P-CH 30V 11A/40A 8TSDSON

欧时:
Infineon MOSFET BSZ120P03NS3GATMA1

e络盟:
晶体管, MOSFET, P沟道, -40 A, -30 V, 0.009 ohm, -10 V, -2.5 V

艾睿:
This BSZ120P03NS3GATMA1 power MOSFET from Infineon Technologies can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 52000 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes optimos technology.

安富利:
Trans MOSFET P-CH 30V 40A 8-Pin TSDSON T/R

TME:
Transistor: P-MOSFET; unipolar; -30V; -40A; 52W; PG-TSDSON-8

Verical:
Trans MOSFET P-CH 30V 11A 8-Pin TSDSON EP T/R

Newark:
MOSFET, P-CH, -30V, -40A, PG-TSDSON-8

Win Source:
MOSFET P-CH 30V 40A TSDSON-8