BSZ105N04NSGATMA1

INFINEON  BSZ105N04NSGATMA1  晶体管, MOSFET, N沟道, 40 A, 40 V, 8.8 mohm, 10 V, 2 V

I OptiMOS™3 功率 MOSFET，高达 40V

OptiMOS™产品提供高效能封装，以解决最具挑战性的应用，在有限空间内提供完全的灵活性。 这些 Infineon 产品经的设计符合并超过计算机应用中更严格的下一代电压调节标准的能效和功率密度要求。

快速切换 MOSFET，用于 SMPS

优化技术，用于直流/直流转换器

符合目标应用的 JEDEC1 规格

N 通道，逻辑电平

极佳的栅极电荷 x R DSon 产品 FOM

极低导通电阻 R DSon

无铅电镀

得捷:
MOSFET N-CH 40V 11A/40A 8TSDSON

欧时:
Infineon OptiMOS 3 系列 Si N沟道 MOSFET BSZ105N04NSGATMA1, 40 A, Vds=40 V, 8引脚 TSDSON封装

e络盟:
晶体管, MOSFET, N沟道, 40 A, 40 V, 0.0088 ohm, 10 V, 2 V

艾睿:
Looking for a component that can both amplify and switch between signals within your circuit? The BSZ105N04NSGATMA1 power MOSFET from Infineon Technologies provides the solution. Its maximum power dissipation is 2100 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes optimos technology. This N channel MOSFET transistor operates in enhancement mode.

安富利:
Trans MOSFET N-CH 40V 11A 8-Pin TSDSON EP

富昌:
BSZ105N04NS 系列 40 V 10.5 mOhm N沟道 OptiMOSTM3 功率 晶体管- PG-TSDSON-8

Chip1Stop:
Trans MOSFET N-CH 40V 11A 8-Pin TSDSON EP

TME:
Transistor: N-MOSFET; unipolar; 40V; 29A; 35W; PG-TSDSON-8

Verical:
Trans MOSFET N-CH 40V 11A 8-Pin TSDSON EP T/R

Newark:
# INFINEON  BSZ105N04NSGATMA1  MOSFET Transistor, N Channel, 40 A, 40 V, 8.8 mohm, 10 V, 2 V