BSZ130N03MS G

INFINEON  BSZ130N03MS G  晶体管, MOSFET, N沟道, 35 A, 30 V, 9.2 mohm, 10 V, 1 V

Description:

With the new OptiMOS™ 30V product family, sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package.

Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications. OptiMOS™ 30V products are tailored to the needs of power management in notebook by improved EMI behavior, as well as increased battery life.

Available in halfbridge configuration power stage 5x6

Summary of Features:

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Ultra low gate and output charge

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Lowest on-state resistance in small footprint packages

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Easy to design in

Benefits:

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Increased battery lifetime

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Improved EMI behavior making external snubber networks obsolete

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Saving costs

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Saving space

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Reducing power losses