BSZ110N08NS5ATMA1

晶体管, MOSFET, N沟道, 40 A, 80 V, 0.0096 ohm, 10 V, 3 V

表面贴装型 N 通道 80 V 40A（Tc） 50W（Tc） PG-TSDSON-8-FL

欧时:
Infineon MOSFET BSZ110N08NS5ATMA1

得捷:
MOSFET N-CH 80V 40A TSDSON

立创商城:
N沟道 80V 40A

e络盟:
晶体管, MOSFET, N沟道, 40 A, 80 V, 0.0096 ohm, 10 V, 3 V

艾睿:
Do you require the advantages of traditional transistors coupled with the switching benefits of power MOSFETs? Infineon Technologies&s; BSZ110N08NS5ATMA1 power MOSFET can provide a solution. Its maximum power dissipation is 50000 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This device is made with optimos 5 technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

安富利:
Trans MOSFET N-CH 80V 40A 8-Pin TSDSON T/R

TME:
Transistor: N-MOSFET; unipolar; 80V; 40A; 50W; PG-TSDSON-8

Verical:
Trans MOSFET N-CH 80V 40A Automotive 8-Pin TSDSON EP T/R