ZXTN5551GTA

Trans GP BJT NPN 160V 0.6A Automotive 4Pin3+Tab SOT-223 T/R

Bipolar BJT Transistor NPN 160V 600mA 130MHz 2W Surface Mount SOT-223

得捷:
TRANS NPN 160V 0.6A SOT223-3

立创商城:
NPN 160V 600mA

贸泽:
Bipolar Transistors - BJT 160V 600mA NPN

艾睿:
Diodes Zetex brings you the solution to your high-voltage BJT needs with their NPN ZXTN5551GTA general purpose bipolar junction transistor. This bipolar junction transistor&s;s maximum emitter base voltage is 6 V. Its maximum power dissipation is 2000 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. It has a maximum collector emitter voltage of 160 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.

安富利:
Trans GP BJT NPN 160V 0.6A 4-Pin3+Tab SOT-223 T/R

Chip1Stop:
Trans GP BJT NPN 160V 0.6A 4-Pin3+Tab SOT-223 T/R

Verical:
Trans GP BJT NPN 160V 0.6A Automotive 4-Pin3+Tab SOT-223 T/R

DeviceMart:
TRANS NPN 160V SOT223