ZXTN25012EFLT

DIODES INC.  ZXTN25012EFLT  单晶体管 双极, 高增益, NPN, 12 V, 260 MHz, 350 mW, 5 A, 800 hFE

The is a NPN low power Bipolar Transistor with advanced process capability. It has been used to achieve high current gain hold up making this device ideal for applications requiring high pulse currents.

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High peak current

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Low saturation voltage

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6V Reverse blocking voltage

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-55 to 150°C Operating temperature range