ZXTN5551GTA
数据手册.pdfTrans GP BJT NPN 160V 0.6A Automotive 4Pin3+Tab SOT-223 T/R
Bipolar BJT Transistor NPN 160V 600mA 130MHz 2W Surface Mount SOT-223
得捷:
TRANS NPN 160V 0.6A SOT223-3
立创商城:
NPN 160V 600mA
贸泽:
Bipolar Transistors - BJT 160V 600mA NPN
艾睿:
Diodes Zetex brings you the solution to your high-voltage BJT needs with their NPN ZXTN5551GTA general purpose bipolar junction transistor. This bipolar junction transistor&s;s maximum emitter base voltage is 6 V. Its maximum power dissipation is 2000 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. It has a maximum collector emitter voltage of 160 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.
安富利:
Trans GP BJT NPN 160V 0.6A 4-Pin3+Tab SOT-223 T/R
Chip1Stop:
Trans GP BJT NPN 160V 0.6A 4-Pin3+Tab SOT-223 T/R
Verical:
Trans GP BJT NPN 160V 0.6A Automotive 4-Pin3+Tab SOT-223 T/R
DeviceMart:
TRANS NPN 160V SOT223