ZXTP2008ZTA

Trans GP BJT PNP 30V 5.5A 2100mW Automotive 4Pin3+Tab SOT-89 T/R

- 双极 BJT - 单 PNP 110MHz 表面贴装型 SOT-89-3

得捷:
TRANS PNP 30V 5.5A SOT89-3

立创商城:
PNP 30V 5.5A

艾睿:
Implement this PNP ZXTP2008ZTA GP BJT from Diodes Zetex to add switching and amplifying capabilities to your electronic circuit design. This bipolar junction transistor&s;s maximum emitter base voltage is 7 V. Its maximum power dissipation is 2100 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. It has a maximum collector emitter voltage of 30 V and a maximum emitter base voltage of 7 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.

Allied Electronics:
Transistor PNP 30V 5.5A SOT89

安富利:
Trans GP BJT PNP 30V 5.5A 4-Pin3+Tab SOT-89 T/R

Chip1Stop:
Trans GP BJT PNP 30V 5.5A 4-Pin3+Tab SOT-89 T/R

Verical:
Trans GP BJT PNP 30V 5.5A Automotive 4-Pin3+Tab SOT-89 T/R

儒卓力:
**PNP TRANSISTOR 30V 5,5A SOT89 **

Win Source:
TRANS PNP 30V 5.5A SOT89