SPP20N65C3XKSA1
晶体管, MOSFET, N沟道, 20.7 A, 650 V, 0.16 ohm, 10 V, 3 V
Summary of Features:
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- Low specific on-state resistance R on*A
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- Very low energy storage in output capacitance E oss @400V
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- Low gate charge Q g
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- Fieldproven CoolMOS™ quality
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- CoolMOS™ technology has been manufactured by since 1998
Benefits:
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- High efficiency and power density
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- Outstanding cost/performance
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- High reliability
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- Ease-of-use
Target Applications:
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- Consumer
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- PC power
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- Adapter