SPP20N60S5XKSA1

单 P沟道 -12 V 1.3 W 10 nC 功率Mosfet 表面贴装 - MICRO-3

Summary of Features:

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Innovative high voltage technology

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Worldwide best R DSon in TO-251 and TO-252

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Ultra low gate charge

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Periodic avalanche rated

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Extreme dv/dt rated

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Ultra low effective capacitances

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Improved transconductance