FDG330P

FAIRCHILD SEMICONDUCTOR  FDG330P  晶体管, MOSFET, P沟道, 2 A, -12 V, 0.084 ohm, -4.5 V, -700 mV

The is a 1.8V specified P-channel MOSFET produced using "s advanced low voltage PowerTrench® process. It has been optimized for battery power management and load switch applications.

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Low gate charge

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High performance Trench technology for extremely low RDS ON

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Compact industry standard surface-mount package