FDG327NZ

FAIRCHILD SEMICONDUCTOR  FDG327NZ  晶体管, MOSFET, N沟道, 1.5 A, 20 V, 0.068 ohm, 4.5 V, 700 mV

The is a N-channel MOSFET produced using PowerTrench® process. It has been designed specifically to improve the overall efficiency of DC-to-DC converters using either synchronous or conventional switching PWM controllers. It has been optimized use in small switching regulators, providing an extremely low RDS ON and gate charge QG in a small package.

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Fast switching speed

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High performance Trench technology for extremely low RDS ON

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High power and current handling capability

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Low gate charge