FDS6575

FAIRCHILD SEMICONDUCTOR  FDS6575  晶体管, MOSFET, P沟道, -10 A, -20 V, 0.0085 ohm, -4.5 V, -600 mV

The is a 2.5V specified P-channel MOSFET produced using rugged gate version of Semiconductor"s advanced PowerTrench® process. It has been optimized for load switch and battery protection applications with a wide range of gate drive voltage 2.5 to 8V.

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Low gate charge

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High performance Trench technology for extremely low RDS ON

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High current and power handling capability