FDS6679

FAIRCHILD SEMICONDUCTOR  FDS6679  晶体管, MOSFET, P沟道, -13 A, -30 V, 0.0073 ohm, -10 V, -1.6 V

The is a P-channel MOSFET produced using Semiconductor"s advanced PowerTrench® process. It is designed specifically to improve the overall efficiency of DC-to-DC converters using either synchronous or conventional switching PWM controllers and battery chargers. It features faster switching and lower gate charge than other MOSFETs with comparable RDS ON specifications. The result is a MOSFET that is easy and safer to drive even at very high frequencies and DC-to-DC power supply designs with higher overall efficiency.

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High performance Trench technology for extremely low RDS ON

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High power and current handling capability