FDS6875

FAIRCHILD SEMICONDUCTOR  FDS6875  双路场效应管, MOSFET, 双P沟道, 6 A, -20 V, 0.024 ohm, -4.5 V, -800 mV

The is a dual P-channel MOSFET produced using advanced PowerTrench™ process. It has been especially tailored to minimize the ON-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics like load switching, battery charging and protection circuits applications.

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Low gate charge

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High performance Trench technology for extremely low RDS ON

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High power and current handling capability

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±8V Gate to source voltage

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-6A Continuous drain current

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-20A Pulsed drain current