IRLR110PBF

VISHAY  IRLR110PBF  晶体管, MOSFET, N沟道, 4.3 A, 100 V, 540 mohm, 5 V, 2 V

The is a third generation N-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The DPAK is designed for surface-mount using vapour phase, infrared or wave soldering techniques. Power dissipation levels up to 1.5W are possible in typical surface-mount applications.

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Dynamic dV/dt rating

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Repetitive avalanche rated

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Surface-mount

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Logic-level gate drive

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RDS ON Specified at VGS = 4 and 5V