STGW30NC60VD

N沟道40A - 600V - TO- 247的快速切换的PowerMESH TM IGBT N-channel 40A - 600V - TO-247 Very fast switching PowerMESH TM IGBT

IGBT - 600 V 80 A 250 W 通孔 TO-247-3

得捷:
IGBT 600V 80A 250W TO247

艾睿:
This STGW30NC60VD IGBT transistor from STMicroelectronics is perfect if your circuit contains high currents passing through it. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 250000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It is made in a single configuration. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

Chip1Stop:
Trans IGBT Chip N-CH 600V 80A 250000mW 3-Pin3+Tab TO-247 Tube

Verical:
Trans IGBT Chip N-CH 600V 80A 250000mW 3-Pin3+Tab TO-247 Tube

Win Source:
N-channel 40A - 600V - TO-247 Very fast switching PowerMESH TM IGBT