STGWT40H65DFB

HB 系列 650 V 40 A 高速 沟槽栅场截止 IGBT - TO-3P

IGBT 分立，STMicroelectronics

得捷:
IGBT 650V 80A 283W TO3P-3L

立创商城:
STGWT40H65DFB

欧时:
STMicroelectronics STGWT40H65DFB N沟道 IGBT, 80 A, Vce=650 V, 3引脚 TO-3P封装

贸泽:
IGBT Transistors 650V 40A HSpd trench gate field-stop IGBT

艾睿:
This fast-switching STGWT40H65DFB IGBT transistor from STMicroelectronics will be perfect in your circuit. Its maximum power dissipation is 283000 mW. It has a maximum collector emitter voltage of 650 V. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It is made in a single configuration. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. This device is made with field stop|trench technology.

安富利:
Trans IGBT Chip N-CH 650V 80A 3-Pin TO-3P Tube

Chip1Stop:
Trans IGBT Chip N-CH 650V 80A 3-Pin3+Tab TO-3P Tube

Verical:
Trans IGBT Chip N-CH 650V 80A 283000mW 3-Pin3+Tab TO-3P Tube