STAC2932BW

HF / VHF / UHF射频功率N沟道MOSFET HF/VHF/UHF RF power N-channel MOSFETs

Ideal for radio frequency environments this RF amplifier from STMicroelectronics is perfect for amplifying and switching electronic signals. Its maximum power dissipation is 625000 mW. The component will be shipped in tray format. This N channel RF power MOSFET operates in enhancement mode. This RF power MOSFET has an operating temperature range of -65 °C to 200 °C. Its maximum frequency is 250 MHz.