STAC4932F

射频金属氧化物半导体场效应RF MOSFET晶体管 300W 50V RF MOS 26dB 123MHz N-Ch

By using a combination of metal-oxide-semiconductor technology, this RF amplifier from STMicroelectronics can be implemented in an electronic circuit as a switching device. The component will be shipped in tray format. This N channel RF power MOSFET operates in enhancement mode. Its maximum frequency is 250 MHz. This RF power MOSFET has an operating temperature range of -65 °C to 200 °C.