PBSS5220T

NXP  PBSS5220T  单晶体管 双极, PNP, 20 V, 300 mW, 2 A, 225 hFE

The is a 2A PNP breakthrough-in small signal BISS Transistor in a plastic package offering ultra-low VCEsat and RCEsat parameters.

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Low collector-emitter saturation voltage VCEsat

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High collector current capabilities of IC and ICM

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Higher efficiency leading to less heat generation

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Reduced printed-circuit board requirements

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3F Marking code