PBSS4041SPN,115

NXP  PBSS4041SPN,115  双极晶体管阵列, NPN, PNP, 60 V, 2.3 W, 6.7 A, 500 hFE, SOIC

The is a NPN-PNP breakthrough-in small signal BISS Bipolar Transistor Array in a medium power surface-mount plastic package. It is suitable for use in battery-driven devices, charging circuits, load-switch and power switches. It utilizes required smaller printed-circuit board PCB area than for conventional transistors.

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Very low collector-emitter saturation voltage VCEsat

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High collector current capability IC and ICM

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High collector current gain hFE at high IC

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High efficiency due to less heat generation

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PBSS4041SP dual PNP complement

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PBSS4041SN dual NPN complement