SIR892DP-T1-GE3

VISHAY  SIR892DP-T1-GE3  场效应管, MOSFET, N通道, 25V, 50A, SOIC, 整卷

The is a 25VDS TrenchFET® N-channel enhancement-mode Power MOSFET suitable for low-side device in synchronous buck DC-to-DC converter applications.

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100% Rg tested

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100% UIS tested

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Halogen-free

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-55 to 150°C Operating temperature range