A2T09VD250NR1
Trans MOSFET N-CH 105V 6Pin TO-270WB T/R
Overview
The 65 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 716 to 960 MHz.
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## Features
* Greater Negative Gate-Source Voltage Range for Improved Class C Operation
* Designed for Digital Predistortion Error Correction Systems
* Optimized for Doherty Applications
* RoHS Compliant
## Features RF Performance Tables
### 900 MHz
Typical Single-Carrier W-CDMA Performance: VDD = 48 Vdc, IDQA+B = 1000 mA, Pout = 65 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.- .
- *Frequency** | **Gps
- .
- * | **ηD
- .
- * | **Output PAR
- .
- * | **ACPR
- .
- * | **IRL
- .
- *
\---|---|---|---|---|---
920 MHz| 22.5| 34.8| 7.5| –34.4| –18
940 MHz| 22.7| 35.4| 7.4| –34.2| –19
960 MHz| 22.4| 35.4| 7.2| –34.3| –12
### 800 MHz
Typical Single-Carrier W-CDMA Performance: VDD = 48 Vdc, IDQA+B = 1000 mA, Pout = 65 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.- .
- *Frequency** | **Gps
- .
- * | **ηD
- .
- * | **Output PAR
- .
- * | **ACPR
- .
- * | **IRL
- .
- *
\---|---|---|---|---|---
790 MHz| 23.0| 37.3| 7.4| –33.0| –15
806 MHz| 23.1| 37.8| 7.2| –33.3| –19
821 MHz| 22.8| 37.0| 7.0| –33.8| –13