A2T09VD300NR1

RF Power Transistor,716 to 960MHz, 250W, Typ Gain in dB is 21.5 @ 920MHz, 48V, LDMOS, SOT1740

Overview

The 79 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 716 to 960 MHz.

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## Features

* Greater Negative Gate-Source Voltage Range for Improved Class C Operation

* Designed for Digital Predistortion Error Correction Systems

* Optimized for Doherty Applications

* RoHS Compliant

## Features RF Performance Tables

### 900 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 48 Vdc, IDQA+B = 1200 mA, Pout = 79 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

.

*Frequency** | **Gps

dB

.

* | **ηD

%

.

* | **Output PAR

dB

.

* | **ACPR

dBc

.

* | **IRL

dB

.

*

\---|---|---|---|---|---

920 MHz| 21.5| 34.4| 7.1| –34.6| –13

940 MHz| 21.6| 34.7| 7.0| –33.5| –14

960 MHz| 21.5| 34.7| 6.8| –33.6| –14

### 800 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 48 Vdc, IDQA+B = 1200 mA, Pout = 79 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

.

*Frequency** | **Gps

dB

.

* | **ηD

%

.

* | **Output PAR

dB

.

* | **ACPR

dBc

.

* | **IRL

dB

.

*

\---|---|---|---|---|---

790 MHz| 21.4| 35.3| 7.2| –35.1| –18

806 MHz| 21.6| 35.7| 7.1| –34.5| –19

821 MHz| 21.6| 36.0| 6.9| –34.3| –16