A2T08VD020NT1

RF Power Transistor,728 to 960MHz, 18.6W, Typ Gain in dB is 19.1 @ 960MHz, 48V, LDMOS, SOT1664

Overview

The 2 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 960 MHz.

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## Features

* Greater Negative Gate-Source Voltage Range for Improved Class C Operation

* On-Chip Matching 50 Ohm Input, DC Blocked

* Integrated Quiescent Current Temperature Compensation with Enable/Disable Function

* Integrated ESD Protection

* RoHS Compliant

## Features RF Performance Tables

### 900 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 48 Vdc, IDQA = IDQB = 40 mA, Pout = 2 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

.

*Frequency** | **Gps

dB

.

* | **ηD

%

.

* | **ACPR

dBc

.

*

\---|---|---|---

920 MHz| 19.3| 21.3| –43.4

940 MHz| 19.3| 21.5| –43.8

960 MHz| 19.1| 21.1| –43.9

### 700 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 48 Vdc, IDQA = IDQB = 40 mA, Pout = 2 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

.

*Frequency** | **Gps

dB

.

* | **ηD

%

.

* | **ACPR

dBc

.

*

\---|---|---|---

728 MHz| 19.2| 18.9| –42.3

748 MHz| 19.2| 19.2| –42.6

768 MHz| 18.9| 18.7| –42.6