A2T09VD250NR1

Trans MOSFET N-CH 105V 6Pin TO-270WB T/R

Overview

The 65 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 716 to 960 MHz.

MoreLess

## Features

* Greater Negative Gate-Source Voltage Range for Improved Class C Operation

* Designed for Digital Predistortion Error Correction Systems

* Optimized for Doherty Applications

* RoHS Compliant

## Features RF Performance Tables

### 900 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 48 Vdc, IDQA+B = 1000 mA, Pout = 65 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

.

*Frequency** | **Gps

dB

.

* | **ηD

%

.

* | **Output PAR

dB

.

* | **ACPR

dBc

.

* | **IRL

dB

.

*

\---|---|---|---|---|---

920 MHz| 22.5| 34.8| 7.5| –34.4| –18

940 MHz| 22.7| 35.4| 7.4| –34.2| –19

960 MHz| 22.4| 35.4| 7.2| –34.3| –12

### 800 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 48 Vdc, IDQA+B = 1000 mA, Pout = 65 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

.

*Frequency** | **Gps

dB

.

* | **ηD

%

.

* | **Output PAR

dB

.

* | **ACPR

dBc

.

* | **IRL

dB

.

*

\---|---|---|---|---|---

790 MHz| 23.0| 37.3| 7.4| –33.0| –15

806 MHz| 23.1| 37.8| 7.2| –33.3| –19

821 MHz| 22.8| 37.0| 7.0| –33.8| –13