2N697

NPN中功率型硅开关晶体管 NPN MEDIUM POWER SILICON SWITCHING TRANSISTOR

has the solution to your circuit"s high-voltage requirements with their NPN general purpose bipolar junction transistor. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 600 mW. This bipolar junction transistor has an operating temperature range of -65 °C to 200 °C. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 5 V.