2N6990

多个（ QUAD ） NPN硅双列直插式 MULTIPLE QUAD NPN SILICON DUAL IN-LINE

Design various electronic circuits with this versatile NPN GP BJT from . This bipolar junction transistor"s maximum emitter base voltage is 6 V. Its maximum power dissipation is 400 mW. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 200 °C. It has a maximum collector emitter voltage of 50 V and a maximum emitter base voltage of 6 V.