锐单电子商城 , 一站式电子元器件采购平台!
  • 电话:400-990-0325

BSZ018NE2LSIATMA1

INFINEON  BSZ018NE2LSIATMA1  晶体管, MOSFET, N沟道, 40 A, 25 V, 0.0015 ohm, 10 V, 2 V

Description:

With the new OptiMOS™ 25V product family, sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications.

Available in halfbridge configuration power stage 5x6

 

Benefits:

.
Save overall system costs by reducing the number of phases in multiphase converters
.
Reduce power losses and increase efficiency for all load conditions
.
Save space with smallest packages like CanPAK™, S3O8 or system in package solution
.
Minimize EMI in the system making external snubber networks obsolete and the products easy to design-in

BSZ018NE2LSIATMA1 PDF数据文档
图片 型号 厂商 下载
BSZ018NE2LSIATMA1 Infineon 英飞凌
BSZ0908NDXTMA1 Infineon 英飞凌
BSZ065N03LSATMA1 Infineon 英飞凌
BSZ060NE2LSATMA1 Infineon 英飞凌
BSZ058N03LSGATMA1 Infineon 英飞凌
BSZ097N04LSGATMA1 Infineon 英飞凌
BSZ0904NSIATMA1 Infineon 英飞凌
BSZ086P03NS3GATMA1 Infineon 英飞凌
BSZ086P03NS3EGATMA1 Infineon 英飞凌
BSZ0907NDXTMA1 Infineon 英飞凌
BSZ036NE2LSATMA1 Infineon 英飞凌