BSZ086P03NS3EGATMA1

INFINEON  BSZ086P03NS3EGATMA1  晶体管, MOSFET, P沟道, -40 A, -30 V, 0.0065 ohm, -10 V, -2.5 V

OptiMOS™P P 通道功率 MOSFET

**Infineon** **OptiMOS**™ P 通道电源 MOSFET 设计用于提供增强功能，以便达到质量指标。 特征包括超低切换损耗、通态电阻、雪崩额定值以及达到汽车解决方案的 AEC 标准。 应用包括：直流-直流、电动机控制、汽车和 eMobility。

增强型模式

雪崩等级

低切换和传导功率损耗

无铅引线电镀；符合 RoHS 标准

标准封装

OptiMOS™ P 通道系列：温度范围为 -55°C 至 +175°C

欧时:
Infineon OptiMOS P 系列 Si P沟道 MOSFET BSZ086P03NS3EGATMA1, 40 A, Vds=30 V, 8引脚 TSDSON封装

得捷:
MOSFET P-CH 30V 13.5A/40A TSDSON

立创商城:
P沟道 30V 13.5A 40A

贸泽:
MOSFET P-Ch -30V 13.5A TSDSON-8 OptiMOS P3

e络盟:
功率场效应管, MOSFET, P沟道, 30 V, 40 A, 0.0065 ohm, TSDSON, 表面安装

艾睿:
Compared to traditional transistors, BSZ086P03NS3EGATMA1 power MOSFETs, developed by Infineon Technologies, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 69000 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This P channel MOSFET transistor operates in enhancement mode. This device utilizes optimos technology.

安富利:
Trans MOSFET P-CH 30V 13.5A 8-Pin TSDSON T/R

Verical:
Trans MOSFET P-CH 30V 13.5A Automotive 8-Pin TSDSON EP T/R

Newark:
# INFINEON  BSZ086P03NS3EGATMA1  MOSFET Transistor, P Channel, -40 A, -30 V, 0.0065 ohm, -10 V, -2.5 V