锐单电子商城 , 一站式电子元器件采购平台!
  • 电话:400-990-0325

BSZ018NE2LSIATMA1

BSZ018NE2LSIATMA1

数据手册.pdf
Infineon(英飞凌) 分立器件

INFINEON  BSZ018NE2LSIATMA1  晶体管, MOSFET, N沟道, 40 A, 25 V, 0.0015 ohm, 10 V, 2 V

Description:

With the new OptiMOS™ 25V product family, sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications.

Available in halfbridge configuration power stage 5x6

 

Benefits:

.
Save overall system costs by reducing the number of phases in multiphase converters
.
Reduce power losses and increase efficiency for all load conditions
.
Save space with smallest packages like CanPAK™, S3O8 or system in package solution
.
Minimize EMI in the system making external snubber networks obsolete and the products easy to design-in
BSZ018NE2LSIATMA1中文资料参数规格
技术参数

额定功率 69 W

针脚数 8

漏源极电阻 0.0015 Ω

极性 N-Channel

耗散功率 69 W

阈值电压 2 V

漏源极电压Vds 25 V

连续漏极电流Ids 22A

上升时间 4.8 ns

输入电容Ciss 2500pF @12VVds

下降时间 3.6 ns

工作温度Max 150 ℃

工作温度Min -55 ℃

耗散功率Max 2100 mW

封装参数

引脚数 8

封装 REEL

外形尺寸

封装 REEL

物理参数

工作温度 -55℃ ~ 150℃

其他

产品生命周期 Active

包装方式 Tape & Reel TR

制造应用 VRD/VRM, Mainboard, Onboard charger

符合标准

RoHS标准

含铅标准 Lead Free

REACH SVHC标准 No SVHC

REACH SVHC版本 2015/12/17

BSZ018NE2LSIATMA1引脚图与封装图
暂无图片
在线购买BSZ018NE2LSIATMA1
型号 制造商 描述 购买
BSZ018NE2LSIATMA1 Infineon 英飞凌 INFINEON  BSZ018NE2LSIATMA1  晶体管, MOSFET, N沟道, 40 A, 25 V, 0.0015 ohm, 10 V, 2 V 搜索库存