BSZ097N04LSGATMA1
INFINEON BSZ097N04LSGATMA1 晶体管, MOSFET, N沟道, 40 A, 40 V, 8.1 mohm, 10 V, 1.2 V
I OptiMOS™3 功率 MOSFET,高达 40V
OptiMOS™产品提供高效能封装,以解决最具挑战性的应用,在有限空间内提供完全的灵活性。 这些 Infineon 产品经的设计符合并超过计算机应用中更严格的下一代电压调节标准的能效和功率密度要求。
快速切换 MOSFET,用于 SMPS
优化技术,用于直流/直流转换器
符合目标应用的 JEDEC1 规格
N 通道,逻辑电平
极佳的栅极电荷 x R DSon 产品 FOM
极低导通电阻 R DSon
无铅电镀
欧时:
Infineon OptiMOS 3 系列 Si N沟道 MOSFET BSZ097N04LSGATMA1, 40 A, Vds=40 V, 8引脚 TSDSON封装
得捷:
MOSFET N-CH 40V 12A/40A 8TSDSON
艾睿:
Make an effective common source amplifier using this BSZ097N04LSGATMA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 2100 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This N channel MOSFET transistor operates in enhancement mode. This device utilizes optimos technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
安富利:
Trans MOSFET N-CH 40V 12A 8-Pin TSDSON T/R
Chip1Stop:
Trans MOSFET N-CH 40V 12A 8-Pin TSDSON EP T/R
TME:
Transistor: N-MOSFET; unipolar; 40V; 40A; 35W; PG-TSDSON-8
Verical:
Trans MOSFET N-CH 40V 12A 8-Pin TSDSON EP T/R
Newark:
# INFINEON BSZ097N04LSGATMA1 MOSFET Transistor, N Channel, 40 A, 40 V, 8.1 mohm, 10 V, 1.2 V