SIR826DP-T1-GE3

VISHAY  SIR826DP-T1-GE3  晶体管, MOSFET, N沟道, 60 A, 80 V, 0.004 ohm, 10 V, 1.2 V

The is a 80VDS TrenchFET® N-channel enhancement-mode Power MOSFET suitable for fixed telecom, DC-to-DC converter, POL and primary and secondary side switch applications.

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100% Rg tested

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100% UIS tested

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Halogen-free

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-55 to 150°C Operating temperature range