ARF463AP1G

Trans RF MOSFET N-CH 500V 9A 3Pin3+Tab TO-247

This RF amplifier from is a semiconductor-based transistor that amplifies or switches electronic signals and electrical power in a circuit. Its maximum power dissipation is 180000 mW. This RF power MOSFET has a minimum operating temperature of -55 °C and a maximum of 150 °C. Its maximum frequency is 100 MHz. This N channel RF power MOSFET operates in enhancement mode.