ARF463AG

Trans RF MOSFET N-CH 500V 9A 3Pin3+Tab TO-247

Ideal for radio frequency environments this RF amplifier from is perfect for amplifying and switching electronic signals. Its maximum power dissipation is 180000 mW. This N channel RF power MOSFET operates in enhancement mode. Its maximum frequency is 100 MHz. This RF power MOSFET has a minimum operating temperature of -55 °C and a maximum of 150 °C.