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FDP5800

FAIRCHILD SEMICONDUCTOR  FDP5800  晶体管, MOSFET, N沟道, 80 A, 60 V, 0.0046 ohm, 20 V, 2.5 V

The is a N-channel MOSFET produced using Semiconductor"s advanced PowerTrench® process. It has been tailored to minimize the ON-state resistance while maintaining superior switching performance. It is suitable for use in synchronous rectification, battery protection circuit and uninterruptible power supplies applications.

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High performance Trench technology for extremely low RDS ON
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Low gate charge
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High power and current handing capability

FDP5800 PDF数据文档
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